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We present a 2D axisymmetric model to simulate nonisothermal electronic-ionic transport in resistive-switching metal-oxide-metal structures, taking into account the effect of contact potential barriers. The model is applied to study the reset process in terms of the dynamic equilibrium between ionic drift and diffusion and of the physical parameters influencing this equilibrium. Furthermore, it is...
We present a numerical drift-diffusion model of electronic-ionic transport combined with a Schottky contact barrier model to study resistive switching phenomena in ReRAM devices. Capturing the transition between Schottky and ohmic contact resistances upon temperature-accelerated ion migration, our model correctly describes the quasi-static I–V switching characteristics as well as dynamic set and reset...
Highly predictive memristive models of resistive switches are required to simulate the behavior of anti-serially connected resistive switches, so called complementary resistive switches (CRSs). As an emerging non-volatile device suited for ultra-dense memory architectures, CRS cells offer great potential also as content addressable memories. Here, we introduce a circuit model for TaOx-based resistive...
Redox-based resistive switching devices are a potential candidate for future non-volatile memory. One type of these devices is the electrochemical metallization cell (ECM), which typically exhibit a bipolar operation scheme. However, at high current levels a transition to polarity independent RESET switching has been observed. This work presents a numerical simulation model of the RESET operation...
Complementary Resistive Switches (CRS) alleviate size limitations for passive crossbar array memory devices by the elimination of sneak paths. Since CRS cells consist of two anti-serially connected bipolar resistive elements, e.g. electro-chemical metallization (ECM) elements, it is straightforward to use their corresponding memristive models for circuit simulation. Here we show that simple linear...
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