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Symmetrical (Pt) electroded undoped (Pt/a-VOx/Pt) and Cr-doped amorphous Vanadium Oxide (Pt/a-V1-yCryOx/Pt) devices were fabricated and electrically analyzed. Both devices show reproducible and symmetrical threshold switching after an initial forming step. However, the kind of threshold switching was basically different. For the undoped VOx, threshold switching was identified as a low TC, VO2-type...
Resistance switching is an interesting alternative to conventional charge storage devices for future high density storage media. Cu/CuTCNQ(300 nm)/Al memory structures with pad size ranging from 1000 down to 150 ??m were carefully studied to apprehend their switching behavior. Electrical testing revealed bipolar resistive switching and a shrink of the memory window as the pad-size decreased. Current...
The evolution of morphology of sol-gel PZT and BST thin films during rapid thermal annealing (RTA) is investigated by recording of elastic light scattering data in reflected mode. The analysis of film morphology and texture evolution obtained by XRD reveals the dependence of crystallization kinetics on the annealing conditions. The evolution of film morphology during the transition to the perovskite...
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