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We report a novel microfluidic surface-enhanced Raman scattering (SERS) device, which is achieved by bonding a polydimethylsiloxane cap with a microchannel structure onto an SERS-active substrate composed of noble-metal covered silicon nanopillar forests. The silicon nanopillar forests are fabricated by using nanomaterial dots, which are introduced in oxygen-plasma bombardment of photoresist, as etching...
32 nm Si and Si1-xGex SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistors for mixed signal and communication applications are presented.
Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.
With the announcement of Intel and IBM to provide 45 nm CPUs, the semiconductor industry has been engaged in the research and development work of 32 nm node CMOS technology. In this paper, we present our development work on the design theory and fabrication process integration of 32 nm node Ge, Si and Si1-xGex "vertical dual carrier field effect transistor" (VDCFET) ASIC for switching and...
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