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A Cu dual damascene interconnect with a low-k organic polymer was fabricated and CD changes of its vias and trenches were investigated. By means of optimizing both the SiO/sub 2/ etching condition and the SiN thickness in a stacked hard mask, CD changes of trenches from a designed pattern size to the final one were suppressed up to about 10 nm. As a result, electrical properties were controlled and...
Transport mechanisms of ions and neutrals in high aspect ratio contact holes during low-pressure, high-density plasma etching were investigated by both experiments and numerical simulations. Etching experiments were performed in electron cyclotron resonance plasmas with a C 4 F 8 /O 2 gas mixture, together with measurements of plasma parameters. The SiO 2 etch rate...
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