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Hybrid bonding, with wafer-level bonding to form oxide-oxide bonds and Cu-Cu bonds, is a promising technology for 3D integrated circuits. In this study, we describe the design, processing. and characterization of test structures formed using hybrid bonding for wafers built in two different technologies; a 180 nm Al BEOL technology and a 110nm Cu BEOL technology. The reliability evaluation shows good...
Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 μm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
Separation by implanted oxygen (SIMOX) wafers and bonded wafers are commercially available silicon-on-insulator (SOI) wafers. In particular, SIMOX process technologies have become important in system-on-a-chip (SoC) fabricated on SOI/Bulk hybrid substrates composed of SOI region for the logic circuits and bulk region for the dynamic random access memories (DRAMs) in recent years. However, we found...
In embedded system design, design errors are often introduced at the interfaces between multiple architectural components. Systematic design methodology for verifying the interaction between the components is imperative for improving the design productivity. In practice, different kinds of interactions need to be examined, in terms of levels of abstraction and in terms of types of architectural components...
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