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The authors examined the origins of high-density trap states in silicon-on-insulator (SOI) layers by means of scanning probe microscopy measurements, I-V characteristics in MOSFETs, and micro-Raman measurements in SOI wafers, including bonded wafers and separation by implanted oxygen (SIMOX) wafers having different root-mean-square values of roughness at the SOI/buried oxide (BOX) interface. As a...
Separation by implanted oxygen (SIMOX) wafers and bonded wafers are commercially available silicon-on-insulator (SOI) wafers. In particular, SIMOX process technologies have become important in system-on-a-chip (SoC) fabricated on SOI/Bulk hybrid substrates composed of SOI region for the logic circuits and bulk region for the dynamic random access memories (DRAMs) in recent years. However, we found...
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