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This paper compares the performance and inter-die variability of doped and undoped channel multiple-gate FETs (MUGFETs) with respect to planar SOI devices. We show that doped-channel FinFETs have equivalent variability to narrow-width planar devices. As such, transitions to FinFETs for narrow-width devices will likely incur minimal variability impact. To match the low variability of wide-width planar...
This paper describes a biaxial-uniaxial hybridized strained CMOS technology achieved through selective uniaxial relaxation of thick SSOI, dual-stress nitride capping layer, and embedded SiGe source/drain. Through novel strain engineering, nFET/pFET Idsat enhancements as high as 27%/36% have been achieved for sub-40nm devices at 1V with 30% reduction in gate leakage current, while introducing minimum...
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