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Enhancement of transistor drivability with suppressing short channel effect is a mandatory requirement for device scaling. In order to address the requirement, transistor structure transition from 2D bulk planar to SOI or 3D FinFET structures is now proceeding [1-4]. In FinFET structures, high dose tilt implantations are used in source drain extension formation. This implantations cause amorphization...
Ion implantation is doping process for manufacturing semiconductor. Doping process contains not only implanting doping atoms at a controlled depth profile but also making damages caused by collisions between ions and silicon crystal atoms, knock-on silicon atoms and silicon crystal atoms. A characteristic of doping atoms such as boron, phosphorous and arsenic is well known because it is easy to measure...
Phosphorus transient enhanced diffusion (TED) is caused by interstitial diffusion mechanism. It is important for the efficient suppression of phosphorus diffusion that some carbons could be located on lattice point in the initial stage of re-growth during annealing and trap interstitial Silicon. Carbon co-implantation after Germanium, pre-amorphization implantation (PAI) is applied for the applications...
The cluster ion beam implanter named CLARIS has been developed for beyond 45nm device production use, which is characterized by the high productivity, high effective low energy high current, and preciseness of incident beam angle and dose uniformity. For the USJ process application, a cluster beam co-implantation is introduced. Carbon cluster co-implantation and the boron cluster beam implantation...
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