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Magnetic tunnel junction (MTJ) devices with three-terminal cell structure are promising building blocks for ultralow-power and high-performance memories and integrated circuits due to their high-speed and high-reliability features [1]. The three-terminal devices with spin-orbit torque (SOT) switching were recently proposed and have intensively investigated for a couple of years [2-7]. The SOT devices...
We report a new nano-switching ESD protection mechanism and dual-polarity Cu/SixOyNz/W nano crossbar array ESD structures. Experiments show full ESD protection featuring fast response of 100pS ultra low leakage of <2pA and ESD protection of >9A. New dispersed local ESD tunneling model and CMOS integration are reported.
In hard disk drives (HDDs), head skew error among multiple heads is pre-calibrated during manufacturing process. Due to environmental change or non-operating shock, additional head skew errors across stroke may be resulted in. In this paper, a reliable recalibration strategy of DC head skew error during servo startup is proposed, where a sector-dependent head-switching scheme for avoidance of wrong...
Electromagnetic (EM) only HEMT model was been proposed in. In this paper, complete EM simulation has been performed on entire switch circuit. The dependences of switch performances on distributed and coupling effects can be quantitatively explained, and the prediction accuracy can be remarkably improved. Further, the EM simulation has been applied to an assembled switch with bond wires. Since a closed...
Electromagnetic (EM) only HEMT model has been proposed and realized with commercial available EM simulator. EM analysis has been applied, for the first time, to the intrinsic part of HEMT device. The small signal behaviors of HEMT can be accurately predicted based directly on the layout and process information. After introducing two EM HEMT models for HEMTs in both on and off states, entire switch...
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