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Nanocrystalline Al 2 O 3 layers were produced by means of impulse plasma deposition (IPD) technique on Si and SiC substrates. Morphology, microstructure and chemical composition of films and film/substrate interfaces were investigated using SEM and SIMS methods. After depositing on top of the layers metal (Al) dot contacts also C-V and I-V measurements of so produced metal-insulator-semiconductor...
W pracy przedstawiono możliwości jakie daje zastosowanie węglika krzemu do wytwarzania dobrze znanych z technologii krzemowej diod Schottky'ego. Materiał ten pozwala na podniesienie temperatury i częstotliwości pracy oraz miniaturyzację przyrządów mocy. Zaprezentowane zostały sposoby podwyższenia napięcia przebicia diody oraz wyniki badań nad metodami zmniejszenia prądów zaporowych i warstwami pasywującymi,...
The paper presents the parameters of MIS transistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the low-energy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [žm/žm] and 200/20 [žm/žm] were manufactured in a standard microelectronic technological laboratory...
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