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The medium power rating two-level three phase voltage source inverter is among the most popular power conversion systems. The typical switching frequency of the commercial medium power rating inverter, however, is limited to tens of kHz. By increasing the switching frequency and using emerging gallium-nitride devices, the size of the overall system can be greatly reduced. This paper begins by reviewing...
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate the challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially the potential failure modes and its related mechanisms. In this paper, a comprehensive study...
This paper presents the analysis and design of gallium nitride (GaN) devices based flyback converter. It is critical to optimize power loop and gate loop for flyback converter due to high dv/dt of GaN device. EPC devices with 200V/12A were used in flyback converter. Because GaN device has no avalanche voltage and is sensitive to gate voltage, one need pay more attention to design of gate driver and...
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