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This paper presents our recent understanding of metal/graphene contact in terms of intrinsic interface obtained from the comparison between resist-free and conventional EB processes, and discusses future challenges to reduce the contact resistivity.
This paper presents experimental results of the counter dipole formation in SiO2/high-k (Al2O3 and Y2O3)/SiO2/Si gate stacks for the first time. The results definitely support the high-k/SiO2 interface dipole layer formation in metal/high-k gate CMOS.
In this paper, we discuss the Fermi Level Pinning (FLP) modulation at metal/germanium (Ge) interface by inserting ultra-thin insulator film. The FLP was alleviated gradually and continuously with increasing insulator (GeO2) thickness up to 2 nm. The results cannot be simply explained by the termination of dangling bonds or defects just at Ge interface. It is inferred that relatively long range (~...
Based on the understanding of kinetic views of GeO desorption from GeO2/Ge stacks, thermodynamic control of the qualities of both GeO2 films and GeO2/Ge interfaces was demonstrated. It was proposed to characterize the effects of GeO desorption on GeO2 by the optical absorption. In addition, MIS band alignment was also discussed from the viewpoint of the effects of metal-GeO2 interaction at the top...
Graphene with a high carrier mobility of more than 10,000 cm2/Vs on SiO2 has attracted much attention as a promising candidate of future high-speed transistor materials. The contact resistance (RC) between graphene and metal electrodes is crucially important for achieving potentially high performance of graphene from both physics and practical viewpoints. This paper discusses metal/graphene contact...
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