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The material and interface engineering of magnetic tunnel junctions (MTJ) is the key for the future of spin transfer torque based random access memories (STT-RAM).
Magnetic thin films, when applied in high-frequency devices, are required to have relatively high real (μ') and low imaginary (μ") permeability, and the ferromagnetic resonance (FMR) frequency need to be higher than the working frequency of the devices. In experiment, the methods including oblique deposition, field annealing, and interfacial exchange coupling, have been often used to increase...
Heavily doped silicon nanowires (SiNWs) are adopted to fabricate a memory device composed of an AlON tunnel layer and a charge trap bilayer, which exhibits a large memory window of 4.6 V when operated in the program/erase phases, i.e., 12 V for 100 and 12 V for 10 ms, along with excellent 70% extrapolated ten-year data retention and good endurance up to ...
This study investigates the combinations of loading which cause injury to knee joint ligaments. A 3D model of a knee, including bones, cartilage, menisci and ligament bundles was created from magnetic resonance images (MRI). Material properties for bone, cartilage, meniscus and ligament were all determined based on previous published work. The model incorporates a novel approach for accounting for...
UV laser excited microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes (FSSMs), which can be applied to the fabrication of high performance radiofrequency (RF) power amplifier. The FSSMs were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure...
Nickel germanides was formed on crystalline n-Ge (100) substrate by conventional RTA annealing at temperatures ranging from 300??C to 600??C. The XRD result reveals that only the NiGe phase is observed during this process temperature range. The orthorhombic structure of NiGe also induces epitaxial tensile strain on Ge substrate (i.e., NiGe itself is compressively strained) due to the difference in...
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