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We demonstrate experimentally a capacitorless IT-DRAM fabricated with 28 nm FDSOI. The Z2-FET memory cell features a large current sense margin and long retention time at T = 25°C and 85°C. Systematic measurements show that Z2-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.
A novel sharp switching Z2-FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The device is fabricated in the most advanced FDSOI (Fully Depleted SOI) technology with Ultra-Thin Body and Buried Oxide (UTBB). The Z2-FET DGP is an upgraded version of Z2-FET. It features sharp on-switch, adjustable...
Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, an adjustable triggering voltage (VON), and can be considered...
WirelessHART (WH) is a recently standardized wireless fieldbus. The connection between WH and the host plant network is obtained with Access Points and Gateways. These devices have complex (and costly) architecture, but do not offer flexibility with respect to new update of the specification, and have limited diagnostic capabilities. In this paper, the architecture of a smart WH Access Point, which...
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