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Spin-transfer torque random access memory (STT-RAM) and magnetoelectric random access memory (MeRAM) are promising non-volatile memory technologies. But STT-RAM and MeRAM both suffer from high write error rate due to thermal fluctuation of magnetization. Temperature and wafer-level process variation significantly exacerbate these problems. In this paper, we propose a design that adaptively selects...
We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar...
We studied the spin transfer torque (STT) driven switching voltage distribution systematically by characterizing the switching probability density function (PDF) with large statistics ( trials) across a wide time scale from 5 ns to 1 s. The skew normal distribution function is found to be a good one to fit the measured switching PDF down to low values, which would be used as a guideline...
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