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Spin-transfer torque random access memory (STT-RAM) and magnetoelectric random access memory (MeRAM) are promising non-volatile memory technologies. But STT-RAM and MeRAM both suffer from high write error rate due to thermal fluctuation of magnetization. Temperature and wafer-level process variation significantly exacerbate these problems. In this paper, we propose a design that adaptively selects...
We review the recent progress in the development of magnetoelectric RAM (MeRAM) based on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the tunneling magnetoresistance effect for readout in a two-terminal memory element, similar to other types of magnetic RAM. However, the writing of information is performed by voltage control of magnetic anisotropy (VCMA) at the...
The talk will first give a brief overview of the energy scaling challenge of today s CMOS and its derivatives, including FINFET, TUNNET, etc. Several potential spintronics devices, which are being pursued by the Nanoelectronics Research Initiative (NRI), along with benchmark efforts will be briefly described.1 Then I will describe the physics and principles as well as advantages and impact of magnetic...
We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar...
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