The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
2.5 kV/100 A high-power P-i-N diode was electron, proton and helium irradiated in a wide range of irradiation doses with irradiation energies in the MeV range. The resulting forward I-V curves were registered in the temperature range 30-125 o C to investigate the magnitude of the crossing point current of the I-V curves--I XING . I XING was found...
The application of a 300 nm thick platinum silicide (PtSi) layer at the place of the anode contact layer of a soft recovery 2.5 kV/100 A high-power P-i-N diode brought a reduction of the forward voltage drop at several tens percent (for the rating current of 100 A) compared to that of the conventional aluminum and Ti-Ni-Ag layers. This enabled us to greatly improve the trade-off curve between the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.