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In this paper the scalability of ALD HfO2 in passivating high indium content InGaAs were studied. A capacitance equivalent thickness (CET) of 1.0 nm has been achieved in this work without any surface pretreated process.
In this paper, there is no surface cleaning and interfacial passivation layer prior to the ALD-HfO2. However, the oxide/InGaAs interface is atomically sharp without the existence of arsenic oxides, strongly indicating self-cleaning of the ALD process. Excellent well-behaved J-EG and C-V characteristics of ALD-HfO2/In0.53Ga0.47As/InP have been demonstrated in this work.
Gate-first self-aligned Ge nMOSFET and pMOSFET with metal gate and CVD HfO2 have been successfully fabricated, using a novel laser thermal process (LTP) S/D activation. Compared with conventional rapid thermal annealing (RTA) activation, LTP provides smaller S/D series resistance with shallower junction depth while maintaining good gate stack integrity. Much improved drive current is obtained on Ge...
At 85degC under very low plusmn 8V and fast 100mus P/E, good memory device integrity of 2.5V initial DeltaVth and 1.45 V 10-year extrapolated retention are obtained. This was achieved in SiO 2/HfON/HfAlO/TaN MONOS using very high-kappa (~22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125degC
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