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Layers of InP grown on GaAs substrates by a two-step growth using metalorganic vapor phase epitaxy have been investigated. We have succeeded in improving the crystallinity of InP epilayers on GaAs substrates by employing a low V/III ratio for initial layer growth. The initial layers of InP were characterized by transmission electron microscopy. By lowering the V/III ratio to 20 during the growth of...
The letter describes a correlation based optical cable fault location technique which, using a 1.3 ?m wavelength, can detect a broken point 10 km distant from source.
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