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Scanning tunneling microscopy luminescence (STML) was induced from the nanometer scale surfaces of cleaved n-type and p-type GaAs(110) wafers by using of an ITO-coated optical fiber probe in an ultrahigh-vacuum chamber. The STML from n-type GaAs(110) surface was induced under negative sample bias when the applied bias exceeds a threshold voltage around −1.5V. Whereas the STML from p-type GaAs(110)...