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Hafnium silicate (HfSiO) has been identified as a promising candidate to replace silicon oxide/oxynitride as a high-κ material for gate dielectric applications. Nitrided hafnium silicate has been found to have a number of advantages in film performance. However, two-step processes have been commonly used, i.e. the first step is the deposition of HfSiO film by CVD, ALD or other techniques, and the...