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ZnO:SiO2 films are prepared by sol–gel technique on Si substrates. The effect of annealing temperatures (Ta) on the structure, surface morphology, and optical and photoluminescence (PL) properties of these films is studied. The X-ray diffraction analysis revealed that the c-axis orientation and the grain size of ZnO:SiO2 films increased at high Ta. High-resolution transmission electron microscopy...
ZnO doped SiO 2 thin films were prepared by the sol–gel method and annealed at different temperatures from 200 to 1100°C. SiO 2 matrix is selected as support due to their high flexibility, thermal stability and high porosity and surface areas. The XRD patterns showed that the hexagonal wurtzite structure of the ZnO film was formed for all the prepared samples. TEM images of ZnO synthesized...
NiO–SiO 2 nanocomposite thin films were prepared by sol–gel technique. The formed films gels were calcined at 200, 400, 600, 800 and 1100°C for 4h leading to NiO–SiO 2 nanocomposites. For these films, the X-ray diffraction, the Fourier transform infrared absorption and the field emission scanning electron microscopy were investigated. Our results show that the NiO(200) diffraction...
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