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Wafer-on-wafer stacking is demonstrated successfully using bump-less Cu-Cu bonding for simultaneous formation of electrical connection, mechanical support and hermetic seal. The mechanical strength of the bonded Cu-Cu layer sustains grinding and chemical etching. Daisy chain of at least 44,000 contacts at 15µm pitch is connected successfully. Cu-Cu hermetic seal ring shows helium leak rate >10X...
The performance of voice, video and data streaming applications using the recently developed standard 802.11n with its MIMO antenna options, strongly depends on the nature of the environment. Although many authors have provided evidence on the effectiveness of this technology in field strength distribution, throughput or propagation-simulation environments, work linking all of these parameters is...
3D integration by TSV approach is a very hot topic now as an enabling technology for 3D wafer-level packaging and 3D IC. Re-distribution layer (RDL) process becomes more critical on high volume Cu (TSV) wafer because of Cu thermal stress effect. Fine pitch low temperature RDL is required in 3D packaging and 3D IC integration. We develop fine pitch (5μm space/5μm width) single and dual damascene processes...
Three dimensional integrated circuits offer significant advantages over single chip packages in terms of functionalities and footprint needed. A key technology to enable the adoption of these advanced packages in electronic systems is Through-Silicon-Via (TSV). The use of TSV has realized integration in the vertical domain. However, as more dies are stacked within the package, the heat generated has...
3D integration by TSV approach is a very hot topic now as an enabling technology for 3D wafer-level packaging and 3D IC. Re-distribution layer (RDL) process becomes more critical on high volume Cu (TSV) wafer because of Cu thermal stress effect. Fine pitch low temperature RDL is required in 3D packaging and 3D IC integration. We develop fine pitch (5µm space/5µm width) single and dual damascene processes...
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