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We apply our hot-carrier degradation (HCD) model, which uses the information about the carrier energy distribution, to represent HCD data measured in n- and p-channel LDMOS transistors. In the first version of our model we use the spherical harmonics expansion approach to solve the Boltzmann transport equation (BTE), while in the second version we employ the drift–diffusion scheme. In the latter case...
We model hot-carrier degradation (HCD) in n- and p-channel LDMOS transistors using an analytic approximation of the carrier energy distribution function (DF). Carrier transport, which is an essential ingredient of our HCD model, is described using the drift-diffusion (DD) method. The analytical DF is used to evaluate the bond-breakage rates. As a reference, we also obtain the DF from the solution...
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