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Physical and electrical properties of hafnium silicon oxynitride (HfSi x O y N z ) dielectric films prepared by UV ozone oxidation of hafnium silicon nitride (HfSiN) followed by annealing to 450 o C are reported. Interfacial layer growth was minimized through room temperature deposition and subsequent ultraviolet/ozone oxidation. The capacitance-voltage (C-V) and current-voltage...
We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O 2 ambient. Hafnium silicate films are obtained with no detectable SiO x interfacial layer as characterized by X-ray photoelectron...
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