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HfSiO and HfSiON films with thicknesses compatible with the requirements for gate dielectrics alternatives to SiO2 in ultra-large scale integration silicon-based CMOSFET devices were deposited on an ultrathin HfSiO15N interfacial layer on Si(001). These structures were submitted to thermal processing routines typical of post-deposition annealing and dopant activation steps in fabrication technology,...
We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O 2 ambient. Hafnium silicate films are obtained with no detectable SiO x interfacial layer as characterized by X-ray photoelectron...
In situ copolymerization of diglycidyl ether of 4,4'-dihydroxybiphenol (DGE-DHBP) with diglycidyl ether of bisphenol F (DGEBP-F) networks using an anhydride curing agent has been investigated. DGEBP-F is a commercial epoxy while cured DGE-DHBP shows liquid crystal transitions. Curing kinetics are determined using differential scanning calorimetry (DSC). The data were fitted using an autocatalytic...
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