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In this paper, we investigate the impact of silicon–germanium channel on PMOSFETs with TiN metal and HfSiON dielectrics gate stack. Performance increase with Ge incorporation in the channel is higher than theoretically expected. Threshold voltage is outstandingly lowered and mobility is highly improved. Poisson–Schrödinger simulations are carried out to interpret the experimental results. Room as...
A comparative study of the effects of high pressure deuterium and hydrogen final anneal (HPD2FA and HPH2FA) is for the first time performed. Effects of high pressure final anneal (HPFA) on the electronic transport is deeply investigated. Reduction of the Coulomb scattering due to interface traps and possibly oxygen vacancies is evidenced after HPFA, and the link with long and short channel transport...
A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be healed by increasing the annealing temperature, is evidenced
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