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Molecular beam epitaxy-grown wafers are used to fabricate all ternary In0.52Al0.48As-In0.53Ga0.47As-In0.52Al0.48As double heterojunction bipolar transistors (DHBTs) with knee voltages of less than 1 V, showing no current blocking characteristic even at current densities of 200 kA/cm2. A set of wafers with a judicious combination of doping interface dipoles and composite collector designs were grown,...
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