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A complete description of physical models for fabricated asymmetric spacer tunnel layer (ASPAT) diodes is reported in this paper. A novel In0.53Ga0.47As/AlAs design is presented and compared to the conventional GaAs/AlAs material system. For both material schemes, physical models were developed based on experimental measurements. Simulated dc characteristics of the devices are given for both planar-...
The work reported here proposes a new Asymmetric Spacer Layer Tunnel (ASPAT) Diode structure. The most interesting feature found from this study is the dual functions capability of the proposed device. In order to expand the device functionality, the new ASPAT has been designed with a thin potential barrier of AlAs sandwiched between double quantum wells of In18Ga.82As. The work focuses on experimental...
A GaAs/AlAs Asymmetric spacer layer Tunnel diode (ASPAT) with very thin (10ML) layer of AlAs have been successfully grown by solid source molecular beam epitaxy (SSMBE). The Current-voltage (IV) characteristics of these ASPAT diodes were measured for both different emitter geometries and over the temperature range of 77 to 398K. A comparison was made between an in-house fabricated Schottky barrier...
Photoconductive devices for THz time-domain spectroscopy systems should ideally be based on materials with short carrier lifetimes, high breakdown voltages, low dark currents, and high carrier mobilities. One of the most widely used materials for such devices is low-temperature-grown (LTG) GaAs, which in its as-grown state is relatively conductive, and as such, must be annealed in order to increase...
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