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The scanning electron microscope (SEM) techniques play a key role in the characterization of various inorganic and/or organic semiconducting materials, micro/nanostructures and devices. The power of the SEM methods is mainly in imaging, characterization and diagnostics of local near surface properties. Among a variety of the SEM methods, Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC)...
High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) on low temperature GaN (LT-GaN) nucleation layers deposited by HVPE. The (0001) sapphire substrates were used. The LT-GaN process parameters were as follows: HCl flow rate was 10 sccm/min, temperature 450degC and deposition time intervals 7 and 9 minutes for sample #1 and #2, respectively. The values...
Inductively coupled oxygen plasma was used to study degradation of Escherichia coli. Bacteria were deposited on a silicon wafer substrate and treated by plasma for different periods. The effect of oxygen plasma ions and neutral oxygen atoms was observed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The first effect was removal of the envelope - a protective coating bacteria...
We report our investigations of the nickel silicide based contact layers prepared for silicon power diodes by electroless nickel plating followed by furnace annealing and subsequent electroless deposition of contact layers. Selected properties of the final structure were studied by the SEM/EDS, micro-Raman spectroscopy and TOP SIMS. The distribution of the species in contacts, quality of interfaces...
The interaction of Ag with a (√3 √3)R30-Au/Si(111) interface containing three-dimensional (3D) Au microparticles has been studied by means of synchrotron radiation photoelectron microspectroscopy and elemental imaging with spatial resolution of 150 nm. The evolution of the space-resolved core-level spectra from the √3-Au and 3D phases has revealed the impact of the surface morphology on the local...
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