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Silicon-based field effect sensors for the H+-ion detection in liquids have been realized by using the PLD (Pulsed Laser Deposition) technique. Therefore A12O3 as a pH sensitive gate insulator material was deposited on top of a capacitive field effect structure, built up of Al/Si/SiO2. The sensor properties like sensitivity and stability of the obtained EIS (Electrolyte-Insulator-Semiconductor) heterostructures...
A vertical GaAs FET with sub-??m gate length has been grown using selective epitaxy. The gate structure of this device consists of an insulator/metal/insulator multilayer. The advantage of this structure is the reduction of the gate-source and gate-drain capacitances due to the relatively low dielectric constant of the insulator. In addition the insulator above the metal gate enables to use the selective...
Planar pseudomorphic InGaAs Schottky diodes with current transport along the 2-DEG channel were prepared and their DC properties are described. The I-V behaviour is similar to diodes without 2-DEG (n=1.12, phi /sub B/=0.49 eV), but the C-V characteristics show stronger capacitance variation. On double-barrier 2-DEG Schottky diodes the capacitance ratio C/sub max//C/sub min/=42 and the varactor sensitivity...
The barrier height enhancement of n-In/sub 0.53/Ga/sub 0.47/As Schottky diodes grown by the MOCVD technique is demonstrated. A 30 nm thin fully depleted p/sup +/-In/sub 0.53/Ga/sub 0.47/As layer (Zn-doped, N/sub A/=1.3*10/sup 18/ cm/sup -3/) is used to enhance the Schottky barrier. Ti is used as a barrier metal and mesa diodes with different barrier contact areas are prepared. The quasi-Schottky diodes...
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