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We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped InxGa1-xN/GaN based multiple quantum wells (MQWs), and a 76-mum-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth (~330 MHz), which is limited by the spontaneous...
By utilizing GaN based four cascade transverse p-n junctions with blue/green multiple-quantum-wells, demonstrated phosphor-free device can eliminate current crowding problem and generate near visible white-light spectra with invariable shape under a wide range of bias current.
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