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The paper is devoted to the Polish Government Program “New Technologies Based on Silicon Carbide for High Temperature, High Power and High Frequency Applications”. The program consists of three general tasks, aimed at: SiC bulk and substrate material fabrication, SiC device manufacturing and SiC device applications, respectively. In the contribution the main assumptions and goals of the program are...
Polish Government Program ldquoNew technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics rdquo covers an project package that consists of three general tasks. The contribution presents the overview of projects in the field dealing with the design and manufacturing of power SiC semiconductor devices.
W pracy przedstawiono możliwości jakie daje zastosowanie węglika krzemu do wytwarzania dobrze znanych z technologii krzemowej diod Schottky'ego. Materiał ten pozwala na podniesienie temperatury i częstotliwości pracy oraz miniaturyzację przyrządów mocy. Zaprezentowane zostały sposoby podwyższenia napięcia przebicia diody oraz wyniki badań nad metodami zmniejszenia prądów zaporowych i warstwami pasywującymi,...
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