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We present a new type of amplified chemomechanical comb-type capacitive gas sensors (ACMs) consisting of a set of flexible sense fingers with asymmetric absorbing polymer patches and side electrodes. This device combines the high sensitivity features of stress-deformed gas sensors and parametric amplification. Preliminary experiments with water and ethanol vapors indicate that the sensitivity of these...
This paper extends our 650V rated GaN device technology to current ratings in excess of 100A. For the first time, devices with single digit Ron values are reported. A record low value of 6mΩ is measured at 100A. The device technology is shown to be fully current collapse free, over the complete voltage and temperature window. Intrinsic reliability test data up to Vds=900V, and T=200°C is provided...
The integration of multiple sensors on a single substrate is reported in this paper. A test chip was designed using the integration platform that implemented a capacitive inertial sensor, a capacitive absolute pressure sensor and a capacitive microphone. The sensors were tested after fabrication with the measured acceleration sensitivity of 10fF/g for a full scale acceleration of 2g and the pressure...
This paper reports on an industrial DHEMT process for 650V rated GaN-on-Si power devices. The MISHEMT transistors use an in-situ MOCVD grown SiN as surface passivation and gate dielectric. Excellent off-state leakage, on-state conduction and low device capacitance and dynamic Ron is obtained. Initial assessment of the intrinsic reliability data on the in-situ SiN is provided.
A simple method is reported for fabrication of AlN/GaN MOS-HEMTs. Ultra-thin Al2O3, which is formed using thermal oxidation of evaporated Al, was used for surface passivation and as a gate dielectric. Prior to formation of Al2O3, the Al protects the very sensitive AlN epilayer from exposure to processing liquid chemicals. Fabricated two-finger AlN/GaN MOS-HEMTs with 3 m gate length and 200 m gate...
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