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The BJT/HBT compact transistor model HICUM has been used for may years in the industry for production-type circuit design. This paper presents the basic operating principles of the model in a nutshell and then provides a concise overview on its availability in foundry process design kits and corresponding product applications.
Many of today's high-frequency systems are implemented using heterojunction bipolar transistor (HBT) technology. For efficient circuit design, a compact modeling methodology for HBTs providing models with different complexity is of great interest. In particular for simulating larfe-scale circuits a simplified compact model such as HICUM/Level0 is beneficial and attractive. A methodology for generating...
The suitability of the compact model HICUM for a state-of-the-art Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology is evaluated with special emphasis on an efficient scalable modeling methodology. Multifinger HBTs particularly applicable to power applications are modeled. For modeling the critical self-heating effect a distributed thermal network is applied, yielding only...
In this paper, an improved and extended set of physics-based analytical equations for describing the external and internal base resistance of silicon-germanium HBTs as a function of geometry (layout) is presented. The investigated layouts include single- and double-base contacts not only in parallel but also perpendicular to the emitter finger. In addition, via and slot base contacts, a large range...
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