The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper reports a 45 nm spin-transfer-torque (STT) MRAM embedded into a standard CMOS logic platform that employs low-power (LP) transistors and Cu/low-k BEOL. We believe that this is the first-ever demonstration of embedded STT MRAM that is fully compatible with the 45 nm logic technology. To ensure the switching margin, a novel "reverse-connection" 1T/1MT cell has been developed with...
The challenges of deriving early-adopter competitive advantage, even with fabless access to process technology, through leveraging features offered by the advanced, and possibly disruptive, process technologies in real SoC products, are outlined. A structured methodology for addressing these challenges, and bridging the gap between process and design, sufficiently early in the development cycle to...
The paper presents practical experiences with deployment of advanced medical teleconsultation system - TeleDICOM over public computer networks and on standard PC computers. Requirements connected with operation in interactive and non-interactive modes have been discussed. Next, the architecture of the system has been described and its influence on deployment process and upgrade procedures has been...
As CMOS technology is scaled beyond 45 nm, SOC/SiP design for wireless chips is increasingly constrained by fundamental technology limits, resulting in challenges including parametric variability, leakage, active power, signal integrity, and diminished performance improvement. New materials and innovative device structures are needed to extend CMOS scaling and integrate disruptive "More than...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.