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This paper presents the design of a wide bandwidth high performance CMOS realization of dual-output second generation current conveyor (CCII±) at 32nm technology node. HSPICE simulation shows that voltage and current bandwidths in excess of 10GHz are obtained, thus making the module quite suitable for applications in the microwave range of frequencies. Besides, the circuit is able to operate at reduced...
The carbon nanotube (CNT) bundles have potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects in very deep submicron (VDSM) technology. This paper presents a comprehensive analysis of mixed bundles of CNTs and compares various transmission line model interconnect parameters (R, L, & C) with that of the Cu interconnects...
Bundles of carbon nanotubes (CNT) have potential to replace on-chip copper (Cu) interconnects due to their large conductivity and current carrying capabilities. Analysis of the impact of process variations on CNT bundles relative to standard copper interconnects is important for predicting the reliability of CNT based interconnects. This paper investigates the impact of process variations on the resistance...
The resistance switching characteristics of several metal oxides has been reported recently for nonvolatile memory applications (NVM). However, various issues such as the switching mechanisms, switching uniformity, scalability and reproducibility have not yet been solved. In this paper, we discuss the recent progress of switching mechanisms and switching behaviors of various materials.
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