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The investigation of short-channel effects (SCE) due to channel length reduction for four different types of n-channel FETs: Bulk MOSFET, SOI MOSFET, DG MOSFET and CNTFET are carried out in this work. Simulators are used to investigate SCEs like threshold voltage (Vth) roll-off, subthreshold Swing (SS) and Ion/Ioff ratio. Our study shows that DG MOSFET, SOI MOSFET and Bulk MOSFET reach their scalable...
This paper proposes a low-power variation - immune dual-threshold voltage CNFET-based 7T SRAM cell. The proposed CNFET-based 7T SRAM cell offers ~1.2× improvement in standby power, ~1.3× improvement in read delay, ~1.1× improvement in write delay. It offers tighter spread in write access time (1.4× @ OEP (optimum energy point) and 1.2× @ VDD=1 V). It features 56.3% improvement in hold static noise...
Subthreshold circuits are an ideal choice for ultra low power, moderate throughput applications. In subthreshold region to meet the ultra-low power requirement of energy constrained devices, supply voltage less than the threshold voltage is applied. At same frequency, subthreshold circuits show orders of magnitude power saving over superthreshold circuits. In subthreshold operating region, minute...
This paper investigates a robust 1-bit static full adder using FinFET at near-threshold region (NTR), a design space where the supply voltage is approximately equal to the threshold voltage of the transistors. This region provides minimum-energy point for the different frequency of operation with more favorable performance and variability characteristics. The proposed design features higher computing...
Optimization of power and speed is a very important issue in low-voltage and low-power applications. In this paper, a 1-bit full adder cell has been successfully analyzed by assigning high-threshold voltage to some transistors and low-threshold voltage to others. Moreover, a robust full adder circuit using dual threshold voltage MOSFETs (DT-MOS) has been proposed. The proposed design features lower...
To understand the influence of oxygen vacancies in on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement...
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