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In this paper we have used quantum mechanical transport approach to analyze electrical characteristics of silicon nanowire transistor and have compared the results with those obtained using semi classical Boltzmann transport model. The analyses employs a three dimensional simulation of Silicon nanowire transistor based on self consistent solution of Poisson, Schrodinger equations. Quantum mechanical...
In this paper we investigate the electrical characteristics of silicon nanowire transistors using a fully ballistic quantum mechanical transport approach to analyze rectangular silicon nanowire transistor. We investigate the impact of structural parameters of nano scale Gate all around Silicon nano wire transistor (GAA-SNWT)on its electrical characteristics in subthreshold regime. In particular we...
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