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This study investigates the performance of avalanche photodetectors (APDs) with a SiGe/Si multiple quantum well (MQW) structure, which are fabricated using an ultrahigh-vacuum chemical vapor deposition (UHV/CVD) system. SiGe MQW APD with a peak response at 1500 nm is obtained. The origin of the detection is due to optical absorption in the SiGe layers. The fabrication of the SiGe/Si MQW APD is compatible...
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