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We investigated Vth fluctuations due to random telegraph signal (RTS) on gate work function control in Hf-doped silicate gate stack compared with the conventional impurity doping. Complex RTS were recognized for both n- and p-MOSFET. The WFC does not appreciably affect Vth fluctuations for n-and p-MOSFET. However, dopant contributes to Vth fluctuation, especially for the p-MOSFET. We found it is caused...
This paper discusses noise currents in a control or gate-drive circuit of a 200-kHz PWM inverter. When the MOSFETs of the inverter are turned-on or -off, the noise current flows into the control and drive circuits. As a result, a malfunction in the controller of the inverter may occur. The equivalent circuit for the noise current is estimated from the experimental waveforms. This paper discusses three...
Influence of the atmosphere on ultra-thin oxynitride film was investigated for the precisely controlled plasma nitridation process. Some organic contaminant adsorb on the wafer before plasma nitridation process in clean room atmosphere. The adsorbed organic contaminant reduces the efficiency of plasma nitridation and increases the electrical thickness. The TDDB characteristic of ultra-thin oxynitride...
High performance CMOSFET technology for 45nm generation is demonstrated. The key device strategies for junction scaling, gate stack scaling and stress-induced mobility enhancement are discussed. Reversed-order junction formation improves short channel effect (SCE) drastically. Novel SiON with improved poly-Si gate depletion improves the drive current by 8%. The systematic study on the process-induced...
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