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The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given set of growth conditions, the mask design (diameter and pitch of the nanoholes) is found to be crucial to achieve selective growth within the nanoholes. The local III/V flux ratio within these nanoholes is a key factor that can be tuned, either...
This study will review some of the critical aspects of cleaning for sub-65 nm technologies. These issues include: surface preparation for high k dielectrics on Si and on Ge, metal gate cleaning and removal of small particles without creating damage to structures
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