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Robustness performance is one of the most important concerns in the design of ESD (electro-static discharge) protection devices, and this quality plays a more and more important role in NEMS protection devices. Improvement of robustness requires not only experience but also TCAD (technology computer aided design) methodology to evaluate ESD protection devices in NEMS. A novel TCAD methodology for...
Speed performance plays a critical role in protection devices against ESD (Electro-Static Discharge) overstress under CDM (Charged Device Model). It is too demanding to obtain speed performance of protection devices under CDM accurately by testing. Therefore we have to resort to TCAD (Technology Computer Aided Design) method to evaluate speed performance under CDM. This TCAD methodology is based on...
A method to exact the electrical parameters and model the "second breakdown" action of MOSFET's under ESD (electrostatic discharge) on circuit-level, using TCAD simulation, is presented. MOSFET is one of the most important ESD protection devices, and is widely used as I/O protection device in integrated circuits. The avalanche breakdown of the MOSFET can be simulated by TCAD tools and the...
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