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Recently, heterostructures of 2-D materials have attracted great interests because they form superlattices which allow band engineering as well as use of multiple degenerate degrees of freedom. We have fabricated hexag- onal boron nitride (hBN)/graphene/hBN superlattices with one-dimensional edge contacts as well as a Hall-bar geometry. Clear conductance oscillations in magnetic fields have been observed,...
In recent experiments, we have succeeded to fabricate a h-BN/graphene/h-BN heterostructure showing a good mobility reaching to 8 × 104 cm2/Vs. And then, we observed a transition between conductance fluctuations at low magnetic field less than 0.5 T and regular Shubnikov-de Haas oscillation at higher than the magnetic field. We analyzed the fluctuations compared to that of former graphene samples on...
Strain engineering is a promising method for controlling electron transport in graphene. From our previous experimental result, we found that the observation of gap formation by lattice strain requires large spatial variation of strain and long mean free path of charge carriers. For satisfying above requirements, we developed new method for introducing lattice strain to graphene. In this method, we...
Clear Shubnikov-de Haas Oscillations have been observed in a high-mobility monolayer graphene sandwiched between two sheets of h-BN. The maximum mobilities of the p- and n-type carriers are 1.2 × 105 cm2/Vs and 1.1 × 105 cm2/Vs at 0.3 K, respectively. The typical effective mass can be estimated as 0.030 and 0.031 in p-type and n-type regions, respectively. The effective mass and the lifetime as a...
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