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We present results on the transport properties of Pb/I/Pb junctions, where I is either a-Ge or a-InO film. At helium temperatures, such structures sustain non-dissipative currents and exhibit systematic sub-gap I-V modulation. The data are consistent with the existence of a Josephson-coupling mechanism involving quantum mechanical coherent diffusion within the Anderson-insulating barrier.
We present results of high field magnetoconductance (MC) measurements on In 2 O 3-x films in the hopping regime. For relatively weak disorder, a purely positive MC is observed. With growing disorder, the MC acquires a negative component that tends to saturate at high fields. The data for the latter case are consistent with the co-existence of two mechanisms for MC; an isotropic,...
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