We present results of high field magnetoconductance (MC) measurements on In 2 O 3 - x films in the hopping regime. For relatively weak disorder, a purely positive MC is observed. With growing disorder, the MC acquires a negative component that tends to saturate at high fields. The data for the latter case are consistent with the co-existence of two mechanisms for MC; an isotropic, spin-alignment mechanism and an anisotropic, quantum-interference one.