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We investigated the photo-induced hysteresis and off-current (Ioff) of amorphous In-Ga-Zn-O (IGZO) TFT, of which the active layer thickeness varies from 400 Å to 700 Å, under 400 nm wavelength illumination. As the active layer thicknesses are increased, the hysteresis and off-current under the light illumination increases. Because the photo-induced holes in the active layer contribute to the increase...
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