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Recent development in GaN free-standing substrates have enabled fabrications of high performance vertical structure GaN devices. This letter reviews fabrication method of the high quality GaN substrates and reports increased breakdown voltages in vertical GaN p-n diodes fabricated on the substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, record breakdown voltages...
Vertical structured GaN power devices have recently been attracting a great interest because of their potential on extremely high-power conversion efficiency. This letter describes increased breakdown voltages in the vertical GaN p-n diodes fabricated on the free-standing GaN substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, the record breakdown voltages ($V_{B}$ ...
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