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We report on gate-last technology for improved effective work function tuning with ∼200meV higher p-EWF at 7Å EOT, ∼2x higher fmax performance, and further options for channel stress enhancement than with gate-first by taking advantage of the intrinsic stress of metals and gate height dependence. Additional key features: 1) scavenging technique yielding UT-EOT down to ∼5Å is demonstrated in gate-last,...
A record high electron mobility (248 cm2/V middots at Eeff of 1 MV/cm) was obtained at Tinv of 1.47 nm, with a band-edge effective work function, by a Hf-Si/HfO2 stack using gate-last process, resulting in ION of 1178 muA/mum (IOFF of 100 nA/ mum ) at Vdd of 1.0 V for a 45-nm gate nMOSFET without strain-enhanced technology.
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