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Temporary bonding and de-bonding techniques using respectively spin-on glass (SOG) and hydrogenated amorphous-Si (a-Si:H) have been examined for multichip-to-wafer three-dimensional (3D) integration process. In this study, a 280 um-thick known good dies of 5 mm × 5 mm in size were temporarily bonded to a pre-deposited (a-Si:H (100 nm) and SOG (400 nm)) support glass wafer. After completing the die...
Back-via three-dimensional (3D) integration using multiple thin-wafer transfer processes has been developed at GINTI, Tohoku University, where visible laser was employed for wafer debonding. The potential advantages of laser debonding are (i) the realization of ultra-thin wafer releasing with less stress as compared to the conventional thermal and chemical debonding methods, and (ii) no adhesive residues...
We have meticulously investigated several pre-grinding parameters such as edge trimming width, depth, and edge-back rinse of smeared glue to mitigate the Si chipping and cracking and to enhance the yield in ultra-thin LSI wafer thinning for the thickness value of up to 20 µm, with respect to different types of temporary bonding glue and the glue thickness. After optimizing several pre-grinding and...
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